edf1as, edf1bs, edf1cs, edf1ds www.vishay.com vishay general semiconductor revision: 25-feb-16 1 document number: 88578 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 miniature glass passivated ultrafast surface mount bridge rectifiers features ? ul recognition, file number e54214 ? ideal for automated placement ? glass passivated pellet chip junction ? ultrafast reverse reco very time for high frequency ? high surge current capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for smps, lighting ballaster, adap ter, battery charger, home appliances, office equipment, and telecommunication applications. mechanical data case: dfs molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body note (1) pulse test: 300 ms pulse width, 1 % duty cycle ? note (1) pulse test: 300 ms pulse width, 1 % duty cycle ? primary characteristics package dfs i f(av) 1 a v rrm 50 v, 100 v, 150 v, 200 v i fsm 50 a i r 5 a v f at i f = 1.0 a 1.05 v t rr 50 ns t j max. 150 c diode variations quad ~ ~ case style dfs ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol edf1as edf1bs edf1cs edf1ds unit maximum repetitive pe ak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 106 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward output rectified current at t a = 40 c (1) i f(av) 1.0 a peak forward surge current single half sine-wave superimposed on rated load i fsm 50 a rating for fusing (t < 8.3 ms) i 2 t10a 2 s operating junction and storage temperature range t j , t stg -55 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol edf1as edf1bs edf1cs edf1ds unit maximum instantaneous forward voltage drop per diode 1.0 a (1) v f 1.05 v maximum dc reverse current at rated dc blocking volt age per diode t a = 25 c i r 5.0 a t a = 125 c 1.0 ma maximum reverse recovery time per diode i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns
edf1as, edf1bs, edf1cs, edf1ds www.vishay.com vishay general semiconductor revision: 25-feb-16 2 document number: 88578 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pcb mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curves output rectified current fig. 2 - maximum non-repetitive peak forward surge current per diode fig. 3 - typical forward characteristics per diode fig. 4 - typical reverse leakage characteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol edf1as edf1bs edf1cs edf1ds unit typical thermal resistance (1) r ? ja 38 c/w r ? jl 12 ordering information (example) preferred p/n unit weight (g ) preferred package code ba se quantity delivery mode edf1ds-e3/45 0.406 45 50 tube edf1ds-e3/77 0.406 77 1500 13" diam eter paper tape and reel 20 40 60 80 100 120 140 160 0 0.5 1.0 i pk /i av = resistive or inductive load 0.75 0.25 0.51 x 0.51" (13 x 13 mm) copper pads ambient temperature (c) average forward output current (a) capacitive loads 5.0 10 20 = i pk i av 1 10 100 0 10 20 30 40 50 60 number of cycles at 60 hz peak forward surge current (a) t j = 150 c single sine-wave 1.0 cycle 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 instantaneous forward voltage (v) instantaneous forward current (a) t j = 25 c pulse width = 300 s 1 % duty cycle 0 20 40 60 80 100 0.1 1 10 100 1000 t j = 125 c t j = 25 c percent of rated peak reverse voltage (%) instantaneous reverse leakage current (a)
edf1as, edf1bs, edf1cs, edf1ds www.vishay.com vishay general semiconductor revision: 25-feb-16 3 document number: 88578 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance per diode package outline dimensions in inches (millimeters) 1 0.1 10 100 1000 10 5 0 15 20 25 30 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p mounting pad la yout 0.255 (6.5) 0.245 (6.2) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) 0.404 (10.3) 0.013 (0.330) 0.003 (0.076) 0.047 (1.20) 0.040 (1.02) 0.205 (5.2) 0.195 (5.0) 0.335 (8.51) 0.320 (8.13) 0.130 (3.3) 0.120 (3.05) 45 0.386 (9.80) case style dfs 0.404 max. (10.26 max.) 0.205 (5.2) 0.195 (5.0) 0.047 min. (1.20 min.) 0.060 min. (1.52 min.)
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mouser electronics authorized distributor click to view pricing, inventory, delivery & lifecycle information: vishay: ? edf1as-e3/45? edf1as-e3/77? edf1bs-e3/45? edf1bs-e3/77? edf1cs-e3/45? edf1cs-e3/77? edf1ds-e3/45? edf1ds-e3/77
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